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1/13 february 2005 stgp10nb60s stgp10nb60sfp- STGB10NB60S n-channel 10a - 600v - to-220/to-220fp/d2pak powermesh? igbt table 1: general features hight input impedance (voltage driven) very low on-voltage drop( v cesat ) high current capability off losses include tail current description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the pow- ermesh ? igbts, with outstanding performances. the suffix ?s? identifies a family optimized achieve minimum on-voltage drop for low frequency appli- cations (<1khz). applications light dimmer static relays motor control table 2: order codes figure 1: package figure 2: internal schematic diagram type v ces v ce(sat) (max) @25c i c @100c stgp10nb60s stgp10nb60sfp STGB10NB60S 600 v 600 v 600 v < 1.7 v < 1.7 v < 1.7 v 10 a 10 a 10 a 1 2 3 1 2 3 1 3 to-220fp to-220 d2pak sales type marking package packaging stgp10nb60s gp10nb60s to-220 tube stgp10nb60sfp gp10nb60sfp to-220fp tube STGB10NB60St4 gb10nb60s d 2 pak tape & reel rev.2
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 2/13 table 3: absolute maximum ratings (1)pulse width limited by max. junction temperature. table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: off table 6: on symbol parameter value unit to-220/d2pak to-220fp v ces collector-emitter voltage (v gs = 0) 600 v v ecr reverse battery protection 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at 25 c20a i c collector current (continuous) at 100 c10a i cm (1) collector current (pulsed) 80 a p tot total dissipation at t c = 25 c 80 25 w derating factor 0.64 0.20 w/ c v iso insulation withstand voltage a.c.(t=1sec, tc=25 c) -- 2500 v t stg storage temperature ? 55 to 150 c t j operating junction temperature min. typ. max. unit rthj-case thermal resistance junction-case to-220 d2pak 1.56 c/w to-220fp 5.0 c/w rthj-amb thermal resistance junction-ambient 62.5 c/w t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) 300 c symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v v br(ecs) emitter-collector breakdown voltage i c = 1ma, v ge = 0 20 v i ces collector cut-off (v ge = 0) v ge = max rating, tc=25 c v ce = max rating, tc=125 c 10 100 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v , v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 2.5 5 v v ce(sat) collector-emitter saturation voltage v ge =15 v, i c = 5 a, v ge =15 v, i c = 10 a, v ge =15 v, i c = 10 a, tj= 125 c 1.15 1.35 1.25 1.7 v v v
3/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S electrical characteristics (continued) table 7: dynamic table 8: switching on table 9: switching off (1)pulse width limited by max. junction temperature. (**)losses include also the tail ( jedec standardization) symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce = 25 v , i c = 10 a 7 s c ies input capacitance v ce = 25 v, f= 1 mhz, v ge = 0 610 pf c oes output capacitance 65 pf c res reverse transfer capacitance 12 pf q g total gate charge v ce = 400 v, i c = 10 a, v ge = 15 v (see figure 20) 33 nc i cl latching current v clamp = 480 v , tj = 150 c r g = 1 k ? 20 a symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time current rise time v cc = 480 v, i c = 10 a r g =1k ? v ge = 15 v (see figure 18) 0.7 0.46 s s (di/dt) on eon (1) turn-on current slope turn-on switching losses v cc = 480 v, i c = 10 a r g =1k ? v ge =15 v,tj = 125 c 8 0.6 a/s mj symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c = 10 a, r g = 10 ? , v ge = 15 v t j = 25 c (see figure 18) 2.2 s t r (v off ) off voltage rise time 1.2 s t f current fall time 1.2 s e off (**) turn-off switching loss 5.0 mj t c cross-over time v cc = 480 v, i c = 10 a, r g = 10 ? , v ge = 15 v t j = 125 c (see figure 18) 3.8 s t r (v off ) off voltage rise time 1.2 s t f current fall time 1.9 s e off (**) turn-off switching loss 8.0 mj
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 4/13 figure 3: output characteristics figure 4: transconductance figure 5: collector-emitter on voltage vs col- lector current figure 6: transfer characteristics figure 7: collector-emitter on voltage vs tem- perature figure 8: gate thereshold vs temperature
5/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S figure 9: capacitance variations figure 10: off losses vs gate resistance figure 11: normalized breakdown voltage vs temperature figure 12: gate charge vs gate-emitter volt- age figure 13: off losses vs temperature figure 14: off losses vs collector current
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 6/13 figure 15: thermal impedance for to-220/ d2pak figure 16: turn-off soa figure 17: thermal impedance for to-220fp
7/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S figure 18: test circuit for inductive load switching figure 19: switching waveforms figure 20: gate charge test circuit
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 8/13 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
9/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 10/13 dim. mm. inch min. typ max. min. typ. max. a 4.32 4.57 0.178 0.180 a1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 d 8.89 9.02 9.40 0.350 0.355 0.370 d1 8.01 0.315 e 10.04 10.28 0.395 0.404 e 2.54 0.010 h 13.10 13.70 0.515 0.540 l 1.30 1.70 0.051 0.067 l1 1.15 1.39 0.045 0.054 l2 1.27 1.77 0.050 0.069 l4 2.70 3.10 0.106 0.122 v2 0 8 0 8 to-263 (d 2 pak) mechanical data
11/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stgp10nb60s - stgp10nb60sfp - STGB10NB60S 12/13 table 10: revision history date revision description of changes 10-nov-2004 1 first release 28-feb-2005 2 some values changed in table 6
13/13 stgp10nb60s - stgp10nb60sfp - STGB10NB60S information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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